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Your search returned 26 records. Click on the hyperlinks to view further details of Titles.. |
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Magazine Name : Ieee Transactions On Electron Devices
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Year : 2002 Volume number : 49 Issue: 08 |
Significant Operating Voltage Reduction On High-Speed Gaas-Based Heterojunction Bipolar Using A Low Band Gap Ingaasn Base Layer
(Article)
Subject:
Gaas Power Switches
,
Heterojunctions
Author:
C.
Monier
page:
1329
-
1335
A Three-Valued D-Flip-Flop And Shift Register Using Multiple-Junction Surface Tunnel Transistors
(Article)
Subject:
D-Ff
,
Ndr
Author:
Katsuhiko
Uemura
page:
1336
-
1340
Inas/Gaas Quantum Dot Infrared Photodetector (Qdip) Ai0.3 Ga0.7 As Blocking Barriers
(Article)
Subject:
Infrared Detector
,
Molecular Beam Eqitaxy (Mbe )
Author:
M
Tang
Ye
Lin
J H
Lee
page:
1341
-
1347
Contrast -Enhancement In Black Dielectric Electroluminesent Devices
(Article)
Subject:
Black Dielectric
,
Control Theory
Author:
J
Heikenfeld
page:
1348
-
1352
Surface-Free Technology By Laser Annealing (Suftla) And Its Application To Poly-Si Tft-Lcds On Plastic Film With Integrated Drivers
(Article)
Subject:
Ablation Zone
Author:
S
Inoue
page:
1353
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1360
Ingan/Gan Light Emitting Diodes With A P-Down Structure
(Article)
Subject:
Double Crystal Xray
,
Diffraction
Author:
K. J
Su
page:
1361
-
1366
Micro Breakdown In Small-Area Ultrathin Gate Oxide
(Article)
Subject:
Gate Oxide
,
Mosfets
Author:
Giorgio
Cellere
page:
1367
-
1374
A Thermal Design Methodology For Multifinger Bipolar Transistor Structures
(Article)
Subject:
Bipolar Modeling
,
Multifingered Hands
Author:
David J
Walkey
page:
1375
-
1383
The Effects Of Grain Boundaries In The Electrical Characteristics Of Large Grain Polycrystalline Thin-Film Transistors
(Article)
Subject:
Amorphous Materials
Author:
Y. R
Chan
page:
1384
-
1391
Nonvolatile Si Quantum Memory With Self-Aligned Doubly-Stacked Dots
(Article)
Subject:
Doubly-Stacked
,
Memory
Author:
Yoshihiro
Ohba
page:
1392
-
1398
An Empirical Model To Determine The Grain Size Of Metal-Induced Lateral Crystallized Film
(Article)
Subject:
Grain Boundaries
,
Metal-Induced
Author:
W. C. Y
Chan
G. Hill
Philip
page:
1399
-
1404
Imprpoved String Ribbon Silicon Hsolar Cell Performance By Thermal Firing Of Screen-Printed Contacts
(Article)
Subject:
Hydrogen Passivation
,
Multicrystalline Silicon
,
Silicon
Author:
Vijay
Yelundur
page:
1405
-
1410
Finfet Design Considerations Based On 3-D Simulation And Analytical Modeling
(Article)
Subject:
Double-Gate Mosfet
,
Finfet
Author:
Guo
Pei J.
page:
1411
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1419
Two-Dimensional Self-Consistent Simulation Of A Traingular P-Channel Soi Nano-Flash Memory Device
(Article)
Subject:
Hole Distribution
,
Nano Flash Memory
Author:
W
Tang
page:
1420
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1426
A Comparative Analysis Of Substrate Current Generation Mechanisms In Tunneling Mos Capacitors
(Article)
Subject:
Anode Hole Injection
Author:
Pierpaolo
Palestri
page:
1427
-
1435
Aplication Of Silicon- Germanium In The Fabrication Of Ultra-Shallow Extension Junctions For Sub-100 Nm Pmosfets
(Article)
Subject:
Dopant Diffusion
Author:
Pushkar
Ranada
page:
1436
-
1443
Analysis And Designof Distributed Esd Protection Circuits For High -Speed Mixed-Signal And Rf Ics
(Article)
Subject:
Broadband
,
Coplanar
Author:
K
Ito
page:
1444
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1454
Determination Of Material Parmeters From Regions Close To The Collector Using Electron Beam-Induced Curent
(Article)
Subject:
Electronic Nose
Author:
H
Wu
page:
1455
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1461
A High-Density Low On-Resistance Trench Lateral Power Mosfet With A Trench Bottom Source Contact
(Article)
Subject:
Miller'S
,
Capacitance
Author:
Naoto
Fujishima
page:
1462
-
1468
Gyrotron-Traveling Wave -Tubes Circuits Based On Lossy Ceramics
(Article)
Subject:
Osillators
,
Ceramics
Author:
Jeffrey P.
Calame
page:
1469
-
1477
A Micromachined Vaccum Triode Using A Carbon Nanotube Cold Cathode
(Article)
Subject:
Carbon Nanotubes
Author:
Chris
Bower
Y. Bar
Shalom
page:
1484
-
1487
The Study Of Threshold Voltage Extraction Of Nitride Spacer Nmos Transistors In Early Stage Hot Carrier Stress
(Article)
Subject:
Maximum Efficiency
Author:
Jiin-Song
Tsai
page:
1488
-
1490
Reduction Of Off-Current In Self-Ailgned Double -Gate Tft With Mask-Free Symmetric Ldd
(Article)
Subject:
Double-Gate
Author:
J.
Zhang
page:
1490
-
1492
A Simple Technique To Determine Barrier Height Change In Gate Oxide Caused By Electrical Stress
(Article)
Subject:
Device Characterization
Author:
T
Chen
page:
1493
-
1498
Noise Margin And Leakage In Ultra-Low Leakage Sram Cell Design
(Article)
Subject:
Cmos Meets Uml And Rup
Author:
Brian S
Hooker
A
Breitenbach
page:
1499
-
1501
An Updated Temperature-Dependent Breakdown Coupling Model Including Both Impact Ionization And Tunneling Mechanisms For Aigaas/Ingaas Hemts
(Article)
Subject:
Breakdown Voltage
,
Impact
,
Thermionic
Author:
L. P
Li
page:
1675
-
1678
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